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We report on fabrication and characterization of electronic devices printedwith inks of quasi-1D van der Waals materials. The quasi-1D van der Waalsmaterials are characterized by 1D motifs in their crystal structure, whichallows for their exfoliation into bundles of atomic chains. The ink wasprepared by the liquid-phase exfoliation of crystals of TiS3 semiconductor intoquasi-1D nanoribbons dispersed in a mixture of ethanol and ethylene glycol. Thetemperature dependent electrical measurements indicate that electron transportin the printed devices is dominated by the electron hopping mechanisms. Thelow-frequency electronic noise in the printed devices is of 1/f type near roomtemperature (f is the frequency). The abrupt changes in the temperaturedependence of the noise spectral density and the spectrum itself can beindicative of the phase transition in individual TiS3 nanoribbons as well asmodifications in the hopping transport regime. The obtained results attest tothe potential of quasi-1D van der Waals materials for applications in printedelectronics.

Charge Transport in Electronic Devices Printed with Inks of Quasi-1D van der Waals Materials