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We demonstrate an external cavity laser formed by combining a silicon nitridephotonic integrated circuit with a reflective semiconductor optical amplifier.The laser uses an alignment tolerant edge coupler formed by a multi-modewaveguide splitter right at the edge of the silicon nitride chip that relaxesthe required alignment to the III-V gain chip and equally splits the poweramong its two output waveguides. Both the ground and first order mode areexcited in the coupler and reach the quadrature condition at the waveguidejunction, ensuring equal power to be coupled to both. Two high-quality-factorring resonators arranged in Vernier configuration close a Sagnac loop betweenthe two waveguides. In addition to wideband frequency tuning, they result in alonger effective cavity length. The alignment tolerant coupler increases thealignment tolerance in the two directions parallel to the chip surface by afactor 3 relative to conventional edge couplers, making it ideal for gain chipintegration via pick-and-place technology. Lasing is maintained in amisalignment range of $\pm$6 $\mu$m in the direction along the edge of thechip. A Lorentzian laser linewidth of 42 kHz is achieved.

Silicon Nitride External Cavity Laser with Alignment Tolerant Multi-Mode RSOA-to-PIC Interface