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We investigate the Predictable Quantum Efficient Detector (PQED) in thevisible and near-infrared wavelength range. The PQED consists of two n-typeinduced junction photodiodes with $Al_2O_3$ entrance window. Measurements areperformed at the wavelengths of 488 nm and 785 nm with incident power levelsranging from 100 ${\mu}$W to 1000 ${\mu}$W. A new way of presenting thenormalized photocurrents on a logarithmic scale as a function of bias voltagereveals two distinct negative slope regions and allows direct comparison ofcharge carrier losses at different wavelengths. The comparison indicatesmechanisms that can be understood on the basis of different penetration depthsat different wavelengths (0.77 ${\mu}$m at 488 nm and 10.2 ${\mu}$m at 785 nm).The difference in the penetration depths leads also to larger difference in thecharge-carrier losses at low bias voltages than at high voltages due to thevoltage dependence of the depletion region.

Characterization of Predictable Quantum Efficient Detector over a wide range of incident optical power and wavelength