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Gallium oxide films were grown by HVPE on (0001) sapphire substrates with andwithout $\alpha$-Cr$_2$O$_3$ buffer produced by RF magnetron sputtering.Deposition on bare sapphire substrates resulted in a mixture of$\alpha$-Ga$_2$O$_3$ and $\epsilon$-Ga$_2$O$_3$ phases with a dislocationdensity of about $2\cdot10^{10}$ cm$^{-2}$. The insertion of$\alpha$-Ga$_2$O$_3$ buffer layers resulted in phase-pure $\alpha$-Ga$_2$O$_3$films and a fourfold reduction of the dislocation density to $5 \cdot 10^9$cm$^{-2}$.

HVPE growth of corundum-structured $\alpha$-Ga$_2$O$_3$ on sapphire substrates with $\alpha$-Cr$_2$O$_3$ buffer layer