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GeSn alloys are promising candidates for complementarymetal-oxide-semiconductor (CMOS)-compatible, tunable lasers. Relaxation ofresidual compressive strain in epitaxial GeSn has recently shown promise inimproving the lasing performance. However, the suspended device configurationthat has thus far been introduced to relax the strain is destined to limit heatdissipation, thus hindering the device performance. Herein, we demonstrate thatstrain-free GeSn microdisk laser devices fully released on Si outperform thecanonical suspended devices. This approach allows to simultaneously relax thelimiting compressive strain while offering excellent thermal conduction.Optical simulations confirm that, despite a relatively small refractive indexcontrast between GeSn and Si, optical confinement in strain-free GeSn opticalcavities on Si is superior to that in conventional strain-free GeSn cavitiessuspended in the air. Moreover, thermal simulations indicate a negligibletemperature increase in our device. Conversely, the temperature in thesuspended devices increases substantially reaching, for instance, 120 K at abase temperature of 75 K under the employed optical pumping conditions. Suchimprovements enable increasing the operation temperature by ~40 K and reducingthe lasing threshold by 30%. This approach lays the groundwork to implement newdesigns in the quest for room temperature GeSn lasers on Si.

Enhanced GeSn Microdisk Lasers Directly Released on Si