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Rare-earth (R) nickelates (such as perovskite RNiO3, trilayer R4Ni3O10, andinfinite layer RNiO2) have attracted tremendous interest very recently.However, unlike widely studied RNiO3 and RNiO2 films, the synthesis of trilayernickelate R4Ni3O10 films is rarely reported. Here, single-crystalline(Nd0.8Sr0.2)4Ni3O10 epitaxial films were coherently grown on SrTiO3 substratesby high-pressure magnetron sputtering. The crystal and electronic structures of(Nd0.8Sr0.2)4Ni3O10 films were characterized by high-resolution X-raydiffraction and X-ray photoemission spectroscopy, respectively. The electricaltransport measurements reveal a metal-insulator transition near 82 K andnegative magnetoresistance in (Nd0.8Sr0.2)4Ni3O10 films. Our work provides anovel route to synthesize high-quality trilayer nickelate R4Ni3O10 films.

Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering