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Light-emitting diodes based on perovskite nanocrystals (PNCs-LEDs) havegained great interest for next-generation display and lighting technologiesprized for their color purity, high brightness and luminous efficiencyapproaching the intrinsic limit imposed by extraction of electroluminescencefrom the device structure. Although the time is ripe for the development ofeffective light outcoupling strategies to further boost the device performance,this technologically relevant aspect of PNC-LEDs is still without a definitivesolution. Here, following theoretical guidelines and without the integration ofcomplex photonic structures, we realize stable PNC-LEDs with EQE as high as29.2% (average EQE=24.7%), which substantially break the outcoupling limit ofcommon PNC-LEDs and systematically surpass any previous perovskite-baseddevice. Key to such unprecedented performance is channeling the recombinationzone in PNC emissive layers as thin as 10 nm, which we achieve by finelybalancing the electron and hole transport using CsPbBr3 PNCs resurfaced with anickel oxide layer. The ultra-thin approach general and, in principle,applicable to other perovskite nanostructures for fabricating highly efficient,color tunable transparent LEDs ideal for unobtrusive screens and displays andis compatible with the integration of photonic components for further enhancedperformance.

Highly Efficient Ultrathin Light Emitting Diodes based on Perovskite Nanocrystals