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We study the growth and properties of quaternary-alloy ferromagneticsemiconductor (FMS) (In0.94-x,Gax,Fe0.06)Sb (x = 5% - 30%, Fe concentration isfixed at 6%) grown by low temperature molecular beam epitaxy(LT-MBE).Reflection high-energy electron diffraction (RHEED) patterns, scanningtransmission electron microscopy (STEM) lattice images, and X-ray diffraction(XRD) spectra indicate that the (In0.94-x,Gax,Fe0.06)Sb layers have azinc-blende crystal structure without any other second phase. The latticeconstant of the (In0.94-x,Gax,Fe0.06)Sb films changes linearly with the Gaconcentration x, indicating that Ga atoms substitute In atoms in the zinc-blendstructure. We found that the carrier type of can be systematically controlledby varying x, being n-type when x \le 10% and p-type when x \ge 20%.Characterizations using magnetic circular dichroism (MCD) spectroscopy indicatethat the (In0.94-x,Gax,Fe0.06)Sb layers have intrinsic ferromagnetism withrelatively high Curie temperatures (TC = 40 - 120 K). The ability to widelycontrol the fundamental material properties (lattice constant, bandgap, carriertype, magnetic property) of (In0.94-x,Gax,Fe0.06)Sb demonstrated in this workis essential for spintronic device applications.

Growth and characterization of quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb