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Colloidal semiconductor nanoplatelets combine weak lateral confinement withstrong Coulomb interactions, enhanced by dielectric confinement. When theplatelets are charged with carriers of the same sign, this results in severeCoulomb repulsions which shape the electronic structure. To illustrate thispoint, the shell filling of type-I (CdSe/CdS) and type-II (CdSe/CdTe)core/crown nanoplatelets with up to 4 electrons or holes is investigatedtheoretically. We find that Coulomb repulsions enable addition energiesexceeding room temperature thermal energy and promote the occupation ofhigh-spin states. For charged excitons and biexcitons in CdSe/CdTenanoplatelets, the repulsions further give rise to multi-peaked emissionspectra with widely tunable (over 100 meV) energy, and a transition fromtype-II to quasi-type-II band profile as the number of electrons confined inthe core increases. We conclude that the number of excess carriers injected innanoplatelets is a versatile degree of freedom to modulate their magnetic andoptoelectronic properties.

Charging of colloidal nanoplatelets: effect of Coulomb repulsion on spin and optoelectronic properties