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In the past years, EUV lithography scanner systems have entered High-VolumeManufacturing for state-of-the-art Integrated Circuits (IC), with criticaldimensions down to 10 nm. This technology uses 13.5 nm EUV radiation, which isshaped and transmitted through a near-vacuum H2 background gas. This gas isexcited into a low-density H2 plasma by the EUV radiation, as generated inpulsed mode operation by the Laser-Produced Plasma (LPP) in the EUV Source.Thus, in the confinement created by the walls and mirrors within the scannersystem, a reductive plasma environment is created that must be understood indetail to maximize mirror transmission over lifetime and to minimize molecularand particle contamination in the scanner. Besides the irradiated mirrors,reticle and wafer, also the plasma and radical load to the surroundingconstruction materials must be considered. This paper will provide an overviewof the EUV-induced plasma in scanner context. Special attention will be givento the plasma parameters in a confined geometry, such as may be found in thescanner area near the reticle. Also, the translation of these specific plasmaparameters to off-line setups will be discussed.

EUV-induced Hydrogen Plasma : Pulsed Mode Operation and Confinement in Scanner