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The realization of ultrahigh quality (Q) resonators regardless of theunderpinning material platforms has been a ceaseless pursuit, because the highQ resonators provide an extreme environment of storage of light to enableobservations of many unconventional nonlinear optical phenomenon with highefficiencies. Here, we demonstrate an ultra-high Q factor (7.1*10^6)microresonator on the 4H-silicon-carbide-on-insulator (4H-SiCOI) platform inwhich both \c{hi}^(2) and \c{hi}^(3) nonlinear processes of high efficiencieshave been generated. Broadband frequency conversions, including second-,third-, fourth-harmonic generation were observed. Cascaded Raman lasing wasdemonstrated in the SiC microresonator for the first time to the best of ourknowledge. Broadband Kerr frequency combs covering from 1300 to 1700 nm wereachieved using a dispersion-engineered SiC microresonator. Our demonstration isa significant milestone in the development of SiC photonic integrated devices.

An Ultrahigh-Q Microresonator on 4H-silicon-carbide-on-insulator Platform for Multiple Harmonics, Cascaded Raman Lasing and Kerr Comb Generations