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Impurities hosted in semiconducting solid matrices represent an extensivelystudied platform for quantum computing applications. In this scenario, theso-called flip-flop qubit emerges as a convenient choice for scalableimplementations in silicon. Flip-flop qubits are realized implantingphosphorous donor in isotopically purified silicon, and encoding the logicalstates in the donor nuclear spin and in its bound electron. Electricallymodulating the hyperfine interaction by applying a vertical electric fieldcauses an Electron Dipole Spin Resonance (EDSR) transition between the stateswith antiparallel spins$\{|\downarrow\Uparrow\rangle,|\uparrow\Downarrow\rangle\}$, that are chosen asthe logical states. When two qubits are considered, the dipole-dipoleinteraction is exploited allowing long-range coupling between them. A universalset of quantum gates for flip-flop qubits is here proposed and the effect of arealistic 1/f noise on the gate fidelity is investigated for the single qubit$R_z(-\frac{\pi}{2})$ and Hadamard gate and for the two-qubit $\sqrt{iSWAP}$gate.

Universal set of quantum gates for the flip-flop qubit in the presence of 1/f noise