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We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2thin-films at room temperature. A combination of the differentialcurrent-voltage measurements with the low-frequency noise spectroscopy provideunambiguous means for detecting the depinning threshold field in quasi-2Dmaterials. The depinning process in 1T-TaS2 is not accompanied by an observableabrupt increase in electric current - in striking contrast to depinning in theconventional charge-density-wave materials with quasi-1D crystal structure. Weexplained it by the fact that the current density from the charge-density wavesin the 1T-TaS2 devices is orders of magnitude smaller than the current densityof the free carriers available in the discommensuration network surrounding thecommensurate charge-density-wave islands. The depinning fields in 1T-TaS2thin-film devices are several orders of magnitude larger than those in quasi-1Dvan der Waals materials. Obtained results are important for the proposedapplications of the charge-density-wave devices in electronics.

Depinning of the Charge-Density Waves in Quasi-2D 1T-TaS2 Devices Operating at Room Temperature