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A large anti-damping spin-obit torque (SOT) efficiency in magneticheterostructures is a prerequisite to realize energy efficient spin torquebased magnetic memories and logic devices. The efficiency can be characterizedin terms of the spin-orbit fields generated by anti-damping torques when anelectric current is passed through the non-magnetic layer. We report a giantspin-orbit field of 48.96 (27.50) mT at an applied current density of 1 MAcm-2in beta-W interfaced Co60Fe40 (Ni81Fe19)/TiN epitaxial structures due to ananti-damping like torque, which results in a magnetization auto-oscillationcurrent density as low as 1.68(3.27) MAcm-2. The spin-orbit field valueincreases with decrease of beta-W layer thickness, which affirms that epitaxialsurface states are responsible for the extraordinary large efficiency. SOTinduced energy efficient in-plane magnetization switching in large 20x100 um2structures has been demonstrated by Kerr microscopy and the findings aresupported by results from micromagnetic simulations. The observed giant SOTefficiencies in the studied all-epitaxial heterostructures are comparable tovalues reported for topological insulators. These results confirm that byutilizing epitaxial material combinations an extraordinary large SOT efficiencycan be achieved using semiconducting industry compatible 5d heavy metals, whichprovides immediate solutions for the realization of energy efficient spin-logicdevices.

Giant spin-orbit torque efficiency in all-epitaxial heterostructures