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How to realize applicably appreciated functionalities based on the couplingbetween charge and spin degrees of freedom is still a challenge in the field ofspintronics. For example, anisotropic magnetoresistance (AMR) effect isutilized to read out the information stored by various magnetic structures,which usually originates from atomic spin-orbit coupling (SOC). However, theapplication of AMR in antiferromagnet-based spintronics is still hindered byrather small AMR value. Here, we discover a colossal AMR effect during thefield-induced metal-to-insulator transition (MIT) in a nearly Dirac materialEuMnSb$_2$ with an antiferromagnetic order of Eu$^{2+}$ moments. The colossalAMR reaches to an unprecedented value of 1.84$\times$10$^6$% at 2 K, which isfour orders of magnitude larger than previously reported values inantiferromagnets. Based on density functional theory calculations, a Dirac-likeband structure, which is strongly dependent on SOC, is confirmed around Y pointand dominates the overall transport properties in the present sample withpredominant electron-type carriers. Moreover, it is also revealed that theindirect band gap around Fermi level is dependent on the magnetic structure ofEu$^{2+}$ moments, which leads to the field-induced MIT and plays a key role onthe colossal AMR effect. Finally, our present work suggests that the similarantiferromagnetic topological materials as EuMnSb$_2$, in which Dirac-likefermions is strongly modulated by SOC and antiferromagnetism, would be afertile ground to explore applicably appreciated AMR effect.

Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb$_2$