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Kink effect is a large obstacle for the cryogenic model of inversion-typebulk silicon MOSFET devices. This letter used two methods to correct the kinkeffect: the modified evolutionary strategy (MES) and dual-model modeling(BSIM3v3 and EKV2.6). Both methods are based on the principle of kink effect.The first method considers impact ionization and substrate current induced bodyeffect (SCBE), and the other considers the change of the freeze-out substratepotential. By applying the above two methods, kink can be corrected to improvethe agreement between simulation data and measurement data, and obtain moreaccurate model parameters. These two methods can be used in further work forcryogenic device modeling and circuit design.

Cryogenic Modeling of MOSFET Device Based on BSIM and EKV Models