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Here we report on studying the electronic and optical material properties ofthe technologically-relevant material indium tin oxide (ITO) as a function ofthermal annealing. In this work, ITO powder has been prepared utilizingsolid-state reaction methods. An electron beam gun technology has been used toprepare a ITO film (325 nm). The ITO window layer has been investigated atvarious temperatures. The effects of absolute temperature on the structural,optical, and electrical properties of the prepared ITO thin film layer areinvestigated. The energy band type corresponding to the orbital transitions hasbeen determined, and the energies of the orbital transitions have beencalculated in the Tauc region, HOMO/LUMO gap, and charge transfer gap. Inadditions, the exciton and Urbach energies have been computed. It has beenfound that these energies increase with increasing the annealing temperature,except for Urbach's energies which behave differently. Thin-film qualitycoefficient, surface resistance, and thermal emission in addition to the angleof refraction as a function of wavelength, have been determined.

The Main Role of Thermal Annealing in Controlling the Structural and Optical Properties of ITO Thin Film Layer