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The experiment of the future electron-positron colliders has unprecedentedrequirements on the vertex resolution, such as around 3micron single pointresolution for the inner most detector layer, with fast readout, and very lowpower-consumption density and material budget. Significant efforts have beenput into the development of monolithic silicon pixel sensors, but there havebeen some challenges to combine all those stringent specifications in a smallpixel area. This paper presents a compact prototype pixel sensor fabricated inLAPIS 200nm SOI process and focuses on the characterization of low capacitanceof the sensing node with a pinned depleted diode structure adopting a novelmethod of forward bias voltage and AC coupling on the diode. Three PDDstructures with 16 micron by 20 micron pixel size were designed and comparedusing radioactive sources and injected charge. The measured result shows thatthe designed PDD structure has very low leakage current and around 3.5fF ofequivalent input capacitance.

Characterization of SOI pixel sensor using pinned depleted diode structure with AC-coupling on the diode