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The emerging magneto-resistive RAM (MRAM) has considerable potential tobecome a universal memory technology because of its several advantages:unlimited endurance, lower read/write latency, ultralow-power operation,high-density, and CMOS compatibility, etc. This paper will demonstrate aneffective technique to generate random numbers from energy-efficientconsumer-off-the-shelf (COTS) MRAM chips. In the proposed scheme, the inherent(intrinsic/extrinsic process variation) stochastic switching behavior ofmagnetic tunnel junctions (MTJs) is exploited by manipulating the write latencyof COTS MRAM chips. This is the first system-level experimental implementationof true random number generator (TRNG) using COTS toggle MRAM technology to thebest of our knowledge. The experimental results and subsequent NIST SP-800-22suite test reveal that the proposed latency-based TRNG is acceptably fast (~22Mbit/s in the worst case) and robust over a wide range of operating conditions.

True Random Number Generation using Latency Variations of Commercial MRAM Chips