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The presence of interface recombination in a complex multilayered thin-filmsolar structure causes a disparity between the internal open-circuit voltage(VOC,in), measured by photoluminescence, and the external open-circuit voltage(VOC,ex) i.e. an additional VOC deficit. Higher VOC,ex value aim require acomprehensive understanding of connection between VOC deficit and interfacerecombination. Here, a deep near-surface defect model at the absorber/bufferinterface is developed for copper indium di-selenide solar cells grown under Cuexcess conditions to explain the disparity between VOC,in and VOC,ex.. Themodel is based on experimental analysis of admittance spectroscopy anddeep-level transient spectroscopy, which show the signature of deep acceptordefect. Further, temperature-dependent current-voltage measurements confirm thepresence of near surface defects as the cause of interface recombination. Thenumerical simulations show strong decrease in the local VOC,in near theabsorber/buffer interface leading to a VOC deficit in the device. This lossmechanism leads to interface recombination without a reduced interface bandgapor Fermi level pinning. Further, these findings demonstrate that the VOC,inmeasurements alone can be inconclusive and might conceal the information oninterface recombination pathways, establishing the need for complementarytechniques like temperature dependent current voltage measurements to identifythe cause of interface recombination in the devices.

Near surface defects: Cause of deficit between internal and external open-circuit voltage in solar cells