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Doping is an effective way to modify the electronic property oftwo-dimensional (2D) materials and endow them with new functionalities.However, wide-range control of the substitutional doping concentration withlarge scale uniformity remains challenging in 2D materials. Here we reportin-situ chemical vapor deposition growth of vanadium (V) doped monolayermolybdenum disulfide (MoS2) with widely tunable doping concentrations rangingfrom 0.3 to 13.1 at%. The key to regulate the doping concentration lies in theuse of appropriate V precursors with different doping abilities, which alsogenerate a large-scale uniform doping effect. Artificial synaptic transistorswere fabricated by using the heavily doped MoS2 as the channel material for thefirst time. Synaptic potentiation, depression and repetitive learning processesare mimicked by the gate-tunable channel conductance change in such transistorswith abundant V atoms to trap/detrap electrons. This work shows a feasiblemethod to dope monolayer 2D semiconductors and demonstrates their use inartificial synaptic transistors.

Doping Concentration Modulation in Vanadium Doped Monolayer Molybdenum Disulfide for Synaptic Transistors