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Monolayers of transition metal dichalcogenides are semiconducting materialswhich offer many prospects in optoelectronics. A monolayer of molybdenumdisulfide (MoS2) has a direct bandgap of 1.88 eV. Hence, when excited withoptical photon energies below its bandgap, no photocarriers are generated and amonolayer of MoS2 is not of much use in either photovoltaics or photodetection.Here, we demonstrate that large size MoS2 monolayer sandwiched between twographene layers makes this heterostructure optically active well below the bandgap of MoS2. An ultrafast optical pump-THz probe experiment reveals inreal-time, transfer of carriers between graphene and MoS2 monolayer uponphotoexcitation with photon energies down to 0.5 eV. It also helps to unravelan unprecedented enhancement in the broadband transient THz response of thistri-layer material system. We propose possible mechanism which can account forthis phenomenon. Such specially designed heterostructures, which can be easilybuilt around different transition metal dichalcogenide monolayers, willconsiderably broaden the scope for modern optoelectronic applications at THzbandwidth.

Sub-bandgap activated charges transfer in a graphene-MoS2-graphene heterostructure