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Ever since the first successful synthesis of stanene via epitaxial growth,numerous efforts have been devoted to improving its overall quality andexploring its topological and other exotic properties under different growthconditions. Here, using first-principles approaches, we reveal the atomisticgrowth mechanisms and robust topological properties of few-layer stanene onBi(111). We first show that monolayer stanene grown on Bi(111) follows a highlydesirable nucleation-and-growth mechanism, characterized by attractiveinteraction of the Sn adatoms. More importantly, we reveal that surfacepassivation by the residual hydrogen is essential in achieving layer-by-layergrowth of high-quality few-layer stanene, with the hydrogen functioning as asurfactant in stabilizing the growing films. Furthermore, we investigatesystematically the dependence of the topological properties of stanene on thefilm thickness, hydrogen passivation, and substrate, and obtain robust quantumspin Hall effects under diverse physical conditions. The robustness of thenontrivial topology is attributable to the strong spin-orbit coupling of the Bisubstrate. The atomistic growth mechanisms and nontrivial topology of staneneas presented here are also discussed in connection with recent experimentalfindings.

Hydrogen-assisted layer-by-layer growth and robust nontrivial topology of stanene films on Bi(111)