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Justification of tight-binding model from Schroedinger formalism for varioustopologies of position-based semiconductor qubits is presented in this work.Simplistic tight-binding model allows for description of single-electrondevices at large integration scale. However it is due to the fact thattight-binding model omits the integro-differential equations that arise fromelectron-electron interaction in Schroedinger model. Two approaches are givenin derivation of tight-binding model from Schroedinger equation. First approachis conducted by usage of Green functions obtained from Schroedinger equation.Second approach is given by usage of Taylor expansion applied to Schroedingerequation. The obtained results can be extended for the case of many Wannierqubits with more than one electron and can be applied to 2 and 3 dimensionalmodel. Furthermore various correlation functions are proposed in Schroedingerformalism that can account for static and time-dependent electric and magneticfield polarizing given Wannier qubit system. One of the central results ofpresented work relies on the emergence of dissipation processes during smoothbending of semiconductor nanowires both in the case of classical and quantumpicture. Presented results give the base for physical description ofelectrostatic Q-Swap gate of any topology using open loop nanowires. We observestrong localization of wavepacket due to nanowire bending.

Fundamental description of Wannier qubits of any topology in semiconductor by analytical and numerical computations