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Carbon nanotube (CNT) based electronic devices are promising forbeyond-silicon solid-state electronics and vacuum micro-nano-electronics.Despite rapid progress in CNT field-effect transistor related solid-stateelectronics, the development of CNT-based vacuum nanoelectronic devices issubstantially blocked by the longstanding challenges in demanding high-currentfield-emission (FE) electron sources at low operating voltage. In addition toCNTs' properties, FE characteristics are also affected by substrate morphologyand interface state. This work demonstrates high-current FE characteristics atrelatively low operating voltage by using CNT films grown directly oncommercially available 2.5D substrates with matched feature size and improvedinterface contact. Simulation results indicate that the commercially available2.5D substrate including nickel foam (NiF) and carbon cloth (CC) withappropriate feature size would dramatically help to enhance emission current ata relatively lower voltage. Modified fabrication process results in improvedcontact between CNTs and the underlying 2.5D substrates. Twenty times higheremission current density with halved lower turn-on electric field achieved byCNTs grown directly on randomly picked NiF shows the potential of 2.5Dsubstrate with good contact in improving FE characteristics. Finally, a highemission current (6 mA) with approximately 75 percent decrease in turn-onelectric field was realized by matching the feature size of 2.5D substrate withthat of CNTs, bringing us significantly closer to reliable high-current andlow-voltage FE electron sources for practical applications.

High-current CNT films grown directly on commercially available 2.5D substrates for low-voltage field-emission electron sources