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Searching for novel antiferromagnetic materials with large magnetotransportresponse is highly demanded for constructing future spintronic devices withhigh stability, fast switching speed, and high density. Here we report acolossal anisotropic magnetoresistance effect in an antiferromagnetic binarycompound with layered structure rare-earth dichalcogenide EuTe2. The AMRreaches 40000%, which is 4 orders of magnitude larger than that in conventionalantiferromagnetic alloys. Combined magnetization, resistivity, and theoreticalanalysis reveal that the colossal AMR effect is attributed to a novel mechanismof vector-field tunable band structure, rather than the conventional spin-orbitcoupling mechanism. Moreover, it is revealed that the strong hybridizationbetween orbitals of Eu-layer with localized spin and Te-layer with itinerantcarriers is extremely important for the large AMR effect. Our results suggest anew direction towards exploring AFM materials with prominent magnetotransportproperties, which creates an unprecedented opportunity for AFM spintronicsapplications.

Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor