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Hot-carrier cooling (HCC) in metal halide perovskites in the high-densityregime is significantly slower compared to conventional semiconductors. Thiseffect is commonly attributed to a hot-phonon bottleneck but the influence ofthe lattice properties on the HCC behaviour is poorly understood. Usingpressure-dependent transient absorption spectroscopy (fs-TAS) we find that atan excitation density below Mott transition, pressure does not affect the HCC.On the contrary, above Mott transition, HCC in methylammonium lead iodide(MAPbI3) is around two times as fast at 0.3 GPa compared to ambient pressure.Our electron-phonon coupling calculations reveal about two times strongerelectron-phonon coupling for the inorganic cage mode at 0.3 GPa. However, ourexperiments reveal that pressure promotes faster HCC only above Motttransition. Altogether, these findings suggest a change in the nature ofexcited carriers in the high-density regime, providing insights on theelectronic behavior of devices operating at such high charge-carrier density.

Accelerated hot-carrier cooling in MAPbI3 perovskite by pressure-induced lattice compression