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Within CERN RD50 Collaboration, MCz Si was identified as a best material forthe detector used in the high luminosity collider experiments. The n in p Sidetectors were utmost radiation hard detectors, which can be used for the phase2 upgrade plan of the new Compact Muon Solenoid tracker detector in 2026. Thechoice of n or p-MCz Si material depends upon the high electrical chargecollection efficiency performance of these detectors over n or p-FZSidetectors. The bulk radiation damage model for n, p-MCz Si need to develop forthe designing, development and optimization of the advanced detectors for thenext generation High Energy Physics experiments. In this work, an advanced fourlevel deep-trap mixed irradiation model (E5, CiOi, E(30K), H(152K)) for n-MCzSi is proposed by the comparison of experimental data on the full depletionvoltage and leakage current to the Shockley Read Hall recombination statisticsresults on the mixed irradiated n-MCz Si PAD detector. Prediction uncertaintyin the radiation damage mixed irradiation model considered in the fulldepletion voltage and leakage current, which was due to the uncertainty inmacroscopic results from an experimental measurement on the mixed irradiatedn-MCz Si pad detector. A very good agreement is observed in the experimentaland SRH results on the full depletion voltage and leakage current. This modelis also used to extrapolate the value of the full depletion voltage atdifferent mixed (proton + neutron) higher irradiation fluences for the thinn-MCz Si microstrip detector

Performance Characteristics of Mixed Irradiated n-MCz Thin Silicon Microstrip Detector for the HL-LHC Experiments