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Gallium oxide with a corundum structure ({\alpha}-Ga2O3) has recentlyattracted great attention in view of electronic and photonic applications dueto its unique properties including a wide band gap exceeding that of the moststable beta phase (\b{eta}-Ga2O3). However, the lower thermal stability of the{\alpha}-phase at ambient conditions in comparison with the \b{eta}-phaserequires careful investigation of its resistance to other external influencessuch as ion irradiation, ion doping, etc. In this work, the structural changesunder the action of Al+ ion irradiation have been investigated for apolymorphic gallium oxide layers grown by hydride vapor phase epitaxy onc-plane sapphire and consisting predominantly of {\alpha}-phase with inclusionsof {\alpha}(\k{appa})-phase. It is established by the X-ray diffractiontechnique that inclusions of {\alpha}(\k{appa})-phase in the irradiated layerundergo the expansion along the normal to the substrate surface, while there isno a noticeable deformation for the {\alpha}-phase. This speaks in favor of thedifferent radiation tolerance of various Ga2O3 polymorphs, especially thehigher radiation tolerance of the {\alpha}-phase. This fact should be takeninto account when utilizing ion implantation to modify gallium oxide propertiesin terms of development of efficient doping strategies.

Ion-Beam Modification of Metastable Gallium Oxide Polymorphs