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We use scanning tunneling microscopy to visualize the atomic-scale electronicstates induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator ofcuprates. We find that when the two dopants approach each other, the transferof spectral weight from high energy Hubbard band to low energy in-gap statecreates a broad peak and nearly V-shaped gap around the Fermi level. The peakposition shows a sudden drop at distance around 4 a0 and then remains almostconstant. The in-gap states exhibit peculiar spatial distributions depending onthe configuration of the two dopants relative to the underlying Cu lattice.These results shed important new lights on the evolution of low energyelectronic states when a few holes are doped into parent cuprates.

Imaging the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 Mott insulator