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We report experimental and computational studies of thermal transportproperties in hexagonal boron nitride (hBN) encapsulated molybdenum disulfide(MoS2) structure using refined optothermal Raman techniques, and reveal veryhigh interfacial thermal conductance between hBN and MoS2. By studying theRaman shift of hBN and MoS2 in suspended and substrate-supported thin filmsunder varying laser power and temperature, we calibrate lateral (in-plane)thermal conductivity of hBN and MoS2 and the vertical interfacial thermalconductance in the hBN/MoS2/hBN heterostructure as well as the interfacesbetween heterostructure and substrate. Crucially, we have found thatinterfacial thermal conductance between hBN and encapsulated MoS2 is 74MW/m2Kand 72MW/m2K in supported and suspended films, respectively, which aresignificantly higher than interfacial thermal conductance between MoS2 andother substrates. Molecular dynamics (MD) computations conducted in parallelhave shown consistent results. This work provides clear evidence ofsignificantly efficient heat dissipation in hBN/MoS2/hBN heterostructures andsheds light on building novel hBN encapsulated nanoelectronics with efficientthermal management.

Very High Interfacial Thermal Conductance in Fully hBN-Encapsulated MoS2 van der Waals Heterostructure