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Two-dimensional (2D) materials with Dirac cones have been intrigued by manyunique properties, i.e., the effective masses of carriers close to zero andFermi velocity of ultrahigh, which yields a great possibility inhigh-performance electronic devices. In this work, using first-principlescalculations, we have predicted a new Dirac cone material of silicon carbidewith the new stoichiometries, named g-SiC6 monolayer, which is composed of sp2hybridized with a graphene-like structure. The detailed calculations haverevealed that g-SiC6 has outstanding dynamical, thermal, and mechanicalstabilities, and the mechanical and electronic properties are still isotropic.Of great interest is that the Fermi velocity of g-SiC6 monolayer is the highestin silicon carbide Dirac materials until now. The Dirac cone of the g-SiC6 iscontrollable by an in-plane uniaxial strain and shear strain, which is promisedto realize a direct application in electronics and optoelectronics. Moreover,we found that new stoichiometries AB6 (A, B = C, Si, and Ge) compounds with thesimilar SiC6 monolayer structure are both dynamics stable and possess Diraccones, and their Fermi velocity was also calculated in this paper. Given theoutstanding properties of those new types of silicon carbide monolayer, whichis a promising 2D material for further exploring the potential applications.

g-SiC6 Monolayer: A New Graphene-like Dirac Cone Material with a High Fermi Velocity