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Non-radiative recombination processes are the biggest hindrance toapproaching the radiative limit of the open-circuit voltage for wide-band gapperovskite solar cells. In addition, to high bulk quality, good interfaces andgood energy level alignment for majority carriers at charge transportlayer-absorber interfaces are crucial to minimize non-radiative recombinationpathways. By tuning the lowest-unoccupied molecular-orbital of electrontransport layers via the use of different fullerenes and fullerene blends, wedemonstrate open-circuit voltages exceeding 1.35 V in CH3NH3Pb(I0.8Br0.2)3device. Further optimization of mobility in binary fullerenes electrontransport layer can boost the power conversion efficiency as high as 18.6%. Wenote in particular that the Voc-fill factor product is > 1.085 V, which is thehighest value reported for halide perovskites with this band gap.

Interface Optimization via Fullerene Blends Enables Open-Circuit Voltages of 1.35 V in CH3NH3Pb(I0.8Br0.2)3 Solar Cells