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We report a dramatic current reduction, or a resistance increase, by a feworders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealedwithin a certain annealing condition window (600 - 700 oC, 1 - 4 min). Resultsfrom similar common-anode Schottky junctions made of Au/p-GaN, Al/Ti/p-GaN andAu/Ti/graphene/p-GaN junctions demonstrated that all the three layers (Au, Tiand p-GaN) are essential for the increased resistance. Raman characterizationof the p-GaN showed a decrease of the Mg-N bonding, i.e., the deactivation ofMg, which is consistent with the Hall measurement results. Moreover, thishigh-resistance junction structure was employed in p-GaN gate AlGaN/GaN HEMTs.It was shown to be an effective gate technology that was capable to boost thegate breakdown voltage from 9.9 V to 13.8 V with a negligible effect on thethreshold voltage or the sub-threshold slope.

Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs