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In this work, we report the use of commercial Gallium Nitride (GaN) powerelectronics to precisely switch complex distributed loads, such as electronlenses and deflectors, without impedance matching. Depending on the chosen GaNfield effect transistor (GaNFET) and driver, these GaN pulsers are capable ofgenerating pulses ranging from 100 - 650 V and 5 - 60 A in 0.25 - 8 ns usingsimple designs with easy control, few-nanosecond propagation delays, and MHzrepetition rates. We experimentally demonstrate a simple 250 ps, 100 V pulsermeasured by a directly coupled 2 GHz oscilloscope. By introducing resistivedampening, we can eliminate ringing to allow for precise 100 V transitions thatcomplete a -10 V to -90 V transition in 1.5 ns, limited primarily by theinductance of the oscilloscope measurement path. The performance of the pulserattached to various load structures is simulated, demonstrating the possibilityof even faster switching of internal fields in these loads. These circuits alsohave 0.25 cm$\mathrm{^2}$ active regions and <1 W power dissipation, enablingtheir integration into a wide variety of environments and apparatus. Theproximity of the GaNFETs to the load due to this integration minimizesparasitic quantities that slow switching as well as remove the need to matchfrom 50 ${\Omega}$ lines by allowing for a lumped element approximation smallloads. We expect these GaN pulsers to have broad application in fields such asoptics, nuclear sciences, charged particle optics, and atomic physics thatrequire nanosecond, high-voltage transitions.

Precise, Sub-Nanosecond, and High-Voltage Switching of Complex Loads Enabled by Gallium Nitride Electronics