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We studied the magnetic properties of ferromagnetic-semiconductor compositesbased on nickel and porous-GaN, motivated by the effort to couple magnetic andsemiconductor functionality. Nickel-infiltrated and nickel-coated (laminatedthin-film) porous GaN structures were fabricated by electrodeposition, andtheir magnetic properties were subsequently examined collectively, by vibratingsample magnetometry and on the nanoscale, by magnetic force microscopy. Wesuccessfully demonstrated the ability to realize nickel infiltrated porous GaN,where the magnetic properties were dominated by the infiltrated materialwithout a measurable surface contribution. We found that the structure andmagnetization of electrodeposited porous-GaN/Ni composites depended on GaNdegree of porosity and the amount of deposited nickel. The magnetizationevolves from a nearly isotropic response in the infiltrated structures, to ashape-anisotropy controlled magnetic thin-film behaviour. Furthermore, bothinfiltrated and thin-film nickel electrodeposited on porous GaN were found tohave low (< 0.1%) strain and corresponding low coercivity: < 6.4 and < 2.4 kA/mfor infiltrated and thin-film, correspondingly. The most likely cause for thelowered strain is increased compliance of the porous GaN compared to bulk.These results encourage deeper investigation of magnetic nanostructure propertytuning and of magnetic property coupling to GaN and similar materials.

Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity