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Compute-in-memory (CiM) is a promising approach to alleviating the memorywall problem for domain-specific applications. Compared to current-domain CiMsolutions, charge-domain CiM shows the opportunity for higher energy efficiencyand resistance to device variations. However, the area occupation and standbyleakage power of existing SRAMbased charge-domain CiM (CD-CiM) are high. Thispaper proposes the first concept and analysis of CD-CiM using nonvolatilememory (NVM) devices. The design implementation and performance evaluation arebased on a proposed 2-transistor-1-capacitor (2T1C) CiM macro usingferroelectric field-effect-transistors (FeFETs), which is free from leakagepower and much denser than the SRAM solution. With the supply voltage between0.45V and 0.90V, operating frequency between 100MHz to 1.0GHz, binary neuralnetwork application simulations show over 47%, 60%, and 64% energy consumptionreduction from existing SRAM-based CD-CiM, SRAM-based current-domain CiM, andRRAM-based current-domain CiM, respectively. For classifications in MNIST andCIFAR-10 data sets, the proposed FeFETbased CD-CiM achieves an accuracy over95% and 80%, respectively.

Enabling Lower-Power Charge-Domain Nonvolatile In-Memory Computing with Ferroelectric FETs