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Special point defects in semiconductors have been envisioned as suitablecomponents for quantum-information technology. The identification of new deepcenters in silicon that can be easily activated and controlled is a main targetof the research in the field. Vacancy-related complexes are suitable to providedeep electronic levels but they are hard to control spatially. With the spiritof investigating solid state devices with intentional vacancy-related defectsat controlled position, here we report on the functionalization of siliconvacancies by implanting Ge atoms through single-ion implantation, producingGe-vacancy (GeV) complexes. We investigate the quantum transport through anarray of GeV complexes in a silicon-based transistor. By exploiting a modelbased on an extended Hubbard Hamiltonian derived from ab-initio results we findanomalous activation energy values of the thermally activated conductance ofboth quasi-localized and delocalized many-body states, compared to conventionaldopants. We identify such states, forming the upper Hubbard band, asresponsible of the experimental sub-threshold transport across the transistor.The combination of our model with the single-ion implantation method enablesfuture research for the engineering of GeV complexes towards the creation ofspatially controllable individual defects in silicon for applications inquantum information technologies.

Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms