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Understanding and optimizing the properties of photoactive two-dimensional(2D) Van der Waals solids are crucial for developing optoelectronicsapplications. Here we present a detailed investigation of layer dependentphotoconductive behavior of InSe based field-effect transistors (FETs). InSebased FETs with five different channel thickness (t, 20 nm < t < 100 nm) wereinvestigated with a continuous laser source of {\lambda} = 658 nm (1.88 eV)over a wide range of illumination power of 22.8 nW < P < 1.29 {\mu}W. All thedevices studied, showed signatures of photogating, however, our investigationssuggest that the photoresponsivities are strongly dependent on the thickness ofthe conductive channel. A correlation between the field-effect mobility({\mu}FE) values (as a function of channel thickness, t) and photoresponsivity(R) indicates that in general R increases with increasing {\mu}FE (decreasingt) and vice versa. The maximum responsivity of ~ 7.84 A/W and ~ 0.59 A/W wasobtained for the device with t = 20 nm and t = 100 nm respectively. Thesevalues could substantially increase under the application of a gate voltage.The structure-property correlation-based studies presented here indicate thepossibility of tuning the optical properties of InSe based photo-FETs for avariety of applications related to photodetector and/or active layers in solarcells.

Role of Layer Thickness and Field-Effect Mobility on Photoresponsivity of Indium Selenide (InSe) Based Phototransistors