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Interface recombination at the absorber buffer interface impedes theefficiency of a solar cell with an otherwise excellent absorber. The internalvoltage or the quasi-Fermi level splitting (qFLs) measures the quality of theabsorber. Interface recombination reduces the open circuit voltage (VOC) withrespect to the qFLs. The present work explores a facile sulfur-basedpost-deposition treatment (S-PDT) to passivate the interface of CuInS2 thinfilms grown under Cu-rich conditions, which show excellent qFLs values, butmuch lower VOCs. The CuInS2 absorbers are treated in three differentS-containing solutions at 80 oC. Absolute calibrated photoluminescence andcurrent-voltage measurements demonstrate a reduction of the deficit betweenqFLs and VOC in the best S-PDT device by almost one third compared to theuntreated device. Analysis of temperature dependence of the open-circuitvoltage shows increased activation energy for the dominant recombination path,indicating less interface recombination. In addition, capacitance transientmeasurements reveal the presence of slow metastable defects in the untreatedsolar cell. The slow response is considerably reduced by the S-PDT, suggestingpassivation of these slow metastable defects. The results demonstrate theeffectiveness of solution based S-treatment in passivating defects, presentinga promising strategy to explore and reduce defect states near the interface ofchalcogenide semiconductors.

Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment