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Epitaxial strain in 4d ferromagnet SrRuO3 films is directly linked to thephysical properties through the strong coupling between lattices, electrons,and spins. It provides an excellent opportunity to tune the functionalities ofSrRuO3 in electronic and spintronic devices. However, a thorough understandingof the epitaxial strain effect in SrRuO3 has remained elusive due to the lackof systematic studies. This study demonstrates wide-range epitaxial straincontrol of electrical and magnetic properties in high-quality SrRuO3 films. Theepitaxial strain was imposed by cubic or pseudocubic perovskite substrateshaving a lattice mismatch of -1.6 to 2.3% with reference to bulk SrRuO3. ThePoisson ratio, which describes the two orthogonal distortions due to thesubstrate clamping effect, is estimated to be 0.33. The Curie temperature (TC)and residual resistivity ratios of the series of films are higher than orcomparable to the highest reported values for SrRuO3 on each substrate,confirming the high crystalline quality of the films. A TC of 169 K is achievedin a tensile-strained SrRuO3 film on the DyScO3 (110) substrate, which is thehighest value ever reported for SrRuO3. The TC (146-169 K), magnetic anisotropy(perpendicular or in-plane magnetic easy axis), and metallic conduction(residual resistivity at 2 K of 2.10 - 373 {\mu}{\Omega}cm) of SrRuO3 arewidely controlled by epitaxial strain. These results provide guidelines todesign SrRuO3-based heterostructures for device applications.

Wide-range epitaxial strain control of electrical and magnetic properties in high-quality SrRuO3 films