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Scaling of GaN high-electron-mobility transistors (HEMTs) usually increasesgate leakage current and deteriorates breakdown characteristic, limiting themaximum drain current and output power density. These bottlenecks can becircumvented by inserting a dielectric material under the gate of HEMTs. DopedHfO2 is an excellent dielectric material but unexplored so far as the gatematerial of HEMTs for high-speed device application. Here we demonstrate thatZr-doped HfO2 (HZO)-gated InAlN/GaN metal-insulator-semiconductor (MIS) HEMTsexhibit remarkable properties. The device with a gate length (Lg) of 50 nmexhibits maximum drain current (Id,max) of 2.15 A/mm, a transconductance (gm)peak of 476 mS/mm, an on/off current ratio (Ion/Ioff) of 9.3*107, a lowdrain-induced barrier lowing (DIBL) of 45 mV/V. RF characterizations reveal acurrent gain cutoff frequency (fT) of 155 GHz and a maximum oscillationfrequency (fmax) of 250 GHz, resulting in a (fT*fmax)1/2 of 197 GHz.Theseproperties, particularly the high (fT/fmax)1/2 and JFOM are highly desirablefor the millimeter-wave power applications, demonstrating the greattechnological potential of HZO/InAlN/GaN MIS-HEMTs.

High-Performance HZO/InAlN/GaN MIS-HEMT with fT/fmax of 155/250 GHz