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A laser multicharged ion source was used to perform interfacial treatment ofthe 4H-SiC/ SiO2 interface using B and Ba ions. A Q-switched Nd:YAG laser(wavelength {\lambda} = 1064 nm, pulse width {\tau} = 7 ns, and fluence F = 135J/cm2) was used to ablate B and Ba targets to generate multicharged ions. Theions were deflected by an electrostatic field to separate them from theneutrals. The multicharged ions were used for nanometer layer growth andshallow ion implantation in 4H-SiC. Several metal-oxide-semiconductorcapacitors (MOSCAP) were fabricated with a combination of B and Ba at theSiC/SiO2 interface. High-low C-V measurements were used to characterize theMOSCAPs. The B interfacial layer reduced the MOSCAP flatband voltage from 4.5to 0.04 V, while the Ba layer had a negligible effect.

Boron and Barium Incorporation at the 4H-SiC/SiO2 Interface using a Laser Multi-Charged Ion Source