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The exploration of germanium (Ge) detectors with amorphous Ge (a-Ge) contactshas drawn attention to the searches for rare-event physics such as dark matterand neutrinoless double-beta decay. The charge barrier height (CBH) of the a-Gecontacts deposited on the detector surface is crucial to suppress the leakagecurrent of the detector in order to achieve la ow-energy detection thresholdand high-energy resolution. The temperature-dependent CBH of a-Ge contacts forthree Ge detectors is analyzed to study the bulk leakage current (BLC)characteristics. The detectors were fabricated at the University of SouthDakota using homegrown crystals. The CBH is determined from the BLC when thedetectors are operated in the reverse bias mode with a guard-ring structure,which separates the BLC from the surface leakage current (SLC). The resultsshow that CBH is temperature dependent. The direct relation of the CBHvariation to temperature is related to the barrier inhomogeneities created onthe interface of a-Ge and crystalline Ge. The inhomogeneities that occur at theinterface were analyzed using the Gaussian distribution model for threedetectors. The CBH of a-Ge contact is projected to zero temperature. Theimplication of the CBH at zero temperature is discussed for Ge detectors witha-Ge contacts in searching for rare-event physics.

Implication of the Temperature-Dependent Charge Barrier Height of Amorphous Germanium Contact Detector in Searching for Rare Event Physics