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A thorough investigation of local structure, influencing macroscopicproperties of the solid is of potential interest. We investigated the localstructure of GaN nanowires (NWs) with different native defect concentrationsynthesized by the chemical vapor deposition technique. Extended X-rayabsorption fine structure (EXAFS) analysis and semi-empirical and the densityfunctional theory (DFT) calculations were used to address the effect of dopantincorporation along with other defects on the co-ordination number and bondlength values. The decrease of the bond length values along preferentialcrystal axes in the local tetrahedral structure of GaN emphasizes the preferredlattice site for oxygen doping. The preferential bond length contraction iscorroborated by the simulations. We have also studied the impact on the localatomic configuration of GaN NWs with Al incorporation. AlxGa1-xN NWs aresynthesized via novel ion beam techniques of ion beam mixing andpost-irradiation diffusion process. The change in the local tetrahedralstructure of GaN with Al incorporation is investigated by EXAFS analysis. Theanalysis provides a clear understanding of choosing a suitable process forternary III-nitride random alloy formation. The local structure study with theEXAFS analysis is corroborated with the observed macroscopic properties studiedusing Raman spectroscopy.

Effect of Oxygen and Aluminium Incorporation on Local Structure of GaN Nanowires: Insight from Extended X-ray Absorption Fine Structure Analysis