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Ternary content addressable memory (TCAM) has been a critical component incaches, routers, etc., in which density, speed, power efficiency, andreliability are the major design targets. There have been the conventionallow-write-power but bulky SRAM-based TCAM design, and also denser but lessreliable or higher-write-power TCAM designs using nonvolatile memory (NVM)devices. Meanwhile, some TCAM designs using dynamic memories have been alsoproposed. Although dynamic design TCAM is denser than CMOS SRAM TCAM and morereliable than NVM TCAM, the conventional row-by-row refresh operations land upwith a bottleneck of interference with normal TCAM activities. Therefore, thispaper proposes a custom low-power dynamic TCAM using nanoelectromechanical(NEM) relay devices utilizing one-shot refresh to solve the memory refreshproblem. By harnessing the unique NEM relay characteristics with a proposednovel cell structure, the proposed TCAM occupies a small footprint of only 3transistors (with two NEM relays integrated on the top through theback-end-of-line process), which significantly outperforms the density of16-transistor SRAM-based TCAM. In addition, evaluations show that the proposedTCAM improves the write energy efficiency by 2.31x, 131x, and 13.5x over SRAM,RRAM, and FeFET TCAMs, respectively; The search energy-delay-product isimproved by 12.7x, 1.30x, and 2.83x over SRAM, RRAM, and FeFET TCAMs,respectively.

Dynamic Ternary Content-Addressable Memory Is Indeed Promising: Design and Benchmarking Using Nanoelectromechanical Relays