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Deterioration of the operation parameters of Al/SiO2/p-type Si surfacebarrier detector upon irradiation with alpha-particles at room temperature wasinvestigated. As a result of 40-days irradiation with a total fluence of 8*10^9{\alpha}-particles, an increase of {\alpha}-peak FWHM from 70 keV to 100 keVwas observed and explained by increase of the detector reverse current due toformation of a high concentration of near mid-gap defect levels. Performed CVmeasurements revealed the appearance of at least 6*10^12 cm-3 radiation-inducedacceptors at the depths where according to the TRIM simulations the highestconcentration of vacancy-interstitial pairs was created by the incoming{\alpha}-particles. The studies carried out by current-DLTS technique allowedto associate the observed increase of the acceptor concentration with the nearmid-gap acceptor level at EV+0.56 eV. This level can be apparently associatedwith V2O defects recognized previously to be responsible for the space chargesign inversion in the irradiated n-type Si detectors.

Influence of {\alpha}-particles irradiation on the performance and defect levels structure of Al/SiO2/p-type Si surface barrier detector