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Depth profiling of thin films by inert gas sputtering is one of the mostimportant applications of Auger electron spectroscopy and X-ray photoelectronspectroscopy. Such an analysis monitors the elemental in-depth composition ofthe thin film system and controls the quality of the manufacturing process. Achallenging task of a sputter depth profile measurement is the determination ofthe interface contaminations. Interface contaminations are only detectable ifthe depth profile data were measured with a sufficient depth resolution.Interface contaminations are crucial, because they strongly influence themechanical and electrical properties of the whole thin film system. The depthresolution of unidirectional sputter depth profiling for polycrystallinesamples is limited by the sputter yield differences attributed to grains havingdifferent crystalline orientations relative to the incoming ion beam. Thereforedepth resolution optimized sputter depth profiling of polycrystalline thinfilms requires dedicated experimental approaches. If the sample is rotatedduring ion sputtering the depth profile is recorded with a better depthresolution because the ion impact direction relative to the grains orientationvaries. If depth profiling can be performed on a single grain only, the depthresolution is improved, too. These approaches are applied to the depthprofiling and interface contamination analysis of a 5000 nm thickpolycrystalline Al layer. An O contamination at the interface of the Al to theSi substrate was detected utilizing these high depth resolution depth profilingmethods.

Depth resolution optimized sputter depth profiling of a polycrystalline Al layer