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This study of highly accelerated lifetime tests of SrTiO$_3$, a modelsemiconducting oxide, is motivated by the interest in reliable multilayerceramic capacitors and resistance-switching thin-film devices. Our analyticalsolution to oxygen-vacancy migration under a DC voltage -- the cause ofresistance degradation in SrTiO$_3$ -- agrees with previous numericalsolutions. However, all solutions fail to explain why degradation kineticsfeature a very strong voltage dependence, which we attribute to the nucleationand growth of cathode-initiated fast-conducting needles. While they have nocolor contrast in SrTiO$_3$ single crystals and are nominally invisible,needles presence in DC-degraded samples -- in silicone oil and in air -- wasunambiguously revealed by in-situ hot-stage photography. Observations insilicone oil and thermodynamic considerations of voltage boundary conditionsfurther revealed a cooccurrence of copious oxygen bubbling and the onset offinal accelerating degradation, suggesting sudden oxygen loss is a precursor offinal failure. Remarkably, both undoped and Fe-doped SrTiO$_3$ can emitelectroluminescence at higher current densities, thus providing a vividindicator of resistance degradation and a metal-to-insulator resistancetransition during cooling. The implications of these findings to thin ceramicand thin film SrTiO$_3$ devices are discussed, along with connections tosimilar findings in likewise degraded fast-ion yttria-stabilized zirconia.

DC Resistance Degradation of SrTiO$_3$: The Role of Virtual-Cathode Needles and Oxygen Bubbles