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Inverse Heusler alloy Mn2CoAl thin films, known as a spin-gaplesssemiconductor (SGS), grown by three different methods: ultra-high vacuummagnetron spattering, Ar-ion beam assisted sputtering, and molecular beamepitaxy, are investigated by comparing their electric transport properties,microstructures and atomic-level structures. Of the samples, the Mn2CoAl thinfilm grown by MBE consists of Mn- and Co-rich phases, the structures of whichare determined to be the L21B-type and disordered L21-type, respectively,according to anomalous XRD analysis. None of them forms the XA-type structureexpected for SGS Heusler alloy, although they all show SGS characteristics. Wesuggest, to validate SGS characteristics, it is necessary to extract not onlymagnetic and electric transport properties but also information aboutmicrostructures and atomic-scale structures of the films including defects suchas atomic swap.

Structural insight using anomalous XRD into Mn2CoAl Heusler alloy films grown by magnetron sputtering, IBAS and MBE techniques